通过使用第二代硅晶体和NiSi 低电阻材料，Intel 65 纳米制程的栅长（Gate Length）和栅电容（Gate Capacitance）都大幅度缩小，让漏电情况得到更好地 控制（据称最多可以减少一千倍），从而大大减少能源 损耗并增加电子开关的准确性。
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...所形成之表面通道(surface channel structure) 可减轻短通道效应(short channel effect) 与产生较高的闸极电容(gate capacitance)，而由于应变矽之高迁移率，故驱动电流提高且驱动电压。
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... 电力场效应晶体管 Power MOSFET 沟道场效应晶体管 slot fieldeffect transistor ; effect transistor ; nfet ; pfet 场效应晶体管的 gate capacitance ...
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intrinsic gate capacitance 本征栅电容
Gate capacitance Cg 栅电容Cg
gate capacitance charging time 栅电容充电时间
gate overlap capacitance 栅极重叠电容
Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.
由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The various applications and features are described of gate-source parasitic capacitance with synchronous rectifier diodes in the realization of actuating rectifier.
阐述了同步整流管的栅源寄生电容在实现整流器件驱动中的不同应用及其特点，并给出了应用实例分析。
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