The relationship between between gate-drain capacitance (Cgd) and drain-source voltage (Vds) is concluded. The influence of thickness and length of gate oxide ,drift concentration and channel concentration on gate-drain capacitance (Cgd) is analysed.
在ISE平台上模拟并研究了VDMOS的电容特性,总结了栅漏电容Cgd和漏源电压Vds的关系;分析了栅氧层厚度和长度、漂移区浓度、沟道区浓度等参数对Cgd的影响。
参考来源 - 射频VDMOS器件结构研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.
器件采用了新的“积木式”台面结构，减小了栅-漏反馈电容。
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