gate tunneling current 栅隧穿电流
direct tunneling gate current 直接隧穿栅电流
schottky gate resonant tunneling transistor 肖特基栅共振隧穿三极管
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
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