The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
Schottky gate resonant tunneling transistor (SGRTT) is fabricated.
通过流片，制作出肖特基栅共振隧穿三极管(SGRTT)。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。
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