... Direct-coupling 直接耦合 Direct-gap semiconductor 直接带隙半导体 Direct transition 直接跃迁 ...
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Direct-gap semiconductor [电子] 直接带隙半导体
narrow gap semiconductor [电子] 窄带隙半导体
indirect gap semiconductor [电子] 间接带隙半导体 ; 间接禁带半导体
zero gap semiconductor [电子] 零带隙半导体
direct band gap semiconductor 直接带隙半导体
physics of narrow gap semiconductor [电子] 窄隙半导体物理学
wide band-gap semiconductor materials 宽带隙半导体材料
low gap semiconductor 窄禁隙半导体 ; 窄禁带半导体
wide-gap semiconductor 宽带隙半导体
Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
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