Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
In recent years, with the extensive application of short wavelength devices, the research of direct wide band gap semiconductor materials attracted more and more attention.
近年来，随着短波长光电器件的逐渐广泛应用，直接宽禁带半导体材料的研究越来越受到人们的重视。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
However, unlike the semiconductor silicon, graphene has no gap between its valence and conduction bands.
然而，与半导体硅不同，石墨烯的价带和导带之间没有带隙。
Due to quantum confinement effect, band gap of semiconductor nanocrystals (NCs) is dependent on the particle size.
由于量子限域效应，半导体纳米晶的能带宽随粒子大小而改变。
Meanwhile the composite exhibits the optical features of a semiconductor with direct band gap.
这种复合结构体系具有直接带隙半导体的光学特性。
The place that exists in PBG structures is similar with the bandgap in semiconductor called photonic band gap.
光子带隙结构中存在着类似于半导体中的禁带，称为光子带隙。
Photonic crystals(PCs) has the properties of photonic band-gap(PBG) which is similar with semiconductor, because of this, it is a hotspot in optical communication and optical device.
光子晶体由于能够产生与半导体能带结构类似的光子禁带，成为了国内外光通信和光学器件方面研究的热点。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
Based on the photoconductive method the Energy Gap Measuring Device for Semiconductor Material-Type DB-1 has been developed.
根据光电导方法，研制了DB - 1型半导体材料禁带宽度测试装置。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
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