Effects of some key design parameters on the performance of the ESD protection circuit are discussed and physically explained.
讨论了一些重要的设计参数对ESD保护电路性能的影响并进行了物理上的解释。
A simulation method for ESD protection structure is presented in the paper by utilizing lumped-parameter circuit.
文章提出了一种通过集总参数电路对ESD保护结构进行模拟的方法。
Three common power bus ESD protection structures in CMOS IC were discussed, the circuit structure and working theories were analyzed, an improved power bus ESD protection structure was put forward.
讨论了三种常见的CMOS集成电路电源总线esd保护结构，分析了其电路结构、工作原理和存在的问题，进而提出了一种改进的ESD保护电源总线拓扑结构。
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