2 d threshold voltage model 阈值电压二维模型
2-d threshold voltage model 二维阈值电压模型
threshold voltage shift model 阈值电压漂移模型
The radiation mobility shift model and threshold voltage model of the non-uniform channel DMOS are proposed.
提出非均匀沟道DMOS辐照迁移率和阈值电压模型。
参考来源 - 非均匀沟道DMOS基本参数及其辐照理论的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOI MOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
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