A threshold voltage model of DMOS by radiation induced positive spatial charge is proposed.
提出了一种DMOS辐照正空间电荷阈值电压模型。
DC model of SOI MOSFET including output current model and threshold voltage model is proposed in this paper. The velocity saturation effect is considered.
本文首先建立了一个SOIMOSFET器件的直流漏电流模型和阈值电压模型，模型考虑了速度饱和效应。
By resolving Poisson equation, the mathematical expression of the threshold voltage model of DMOS by radiation induced positive spatial charge is obtained.
求解泊松方程，由此给出dmos辐照正空间电荷阈值电压模型表示式。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.
根据获得的模型，该门限电压可以预测并且可以用于电路设计。
Using the averaged switch modeling approach, a non-linear large-signal averaged model of non-ideal PWM switch is derived, taking into account all parasitic resistances and threshold voltage of diode.
运用平均开关建模法，建立非理想PWM开关的非线性大信号平均模型，包含全部寄生电阻和二极管的正向压降。
Using the averaged switch modeling approach, a non-linear large-signal averaged model of non-ideal PWM switch is derived, taking into account all parasitic resistances and threshold voltage of diode.
运用平均开关建模法，建立非理想PWM开关的非线性大信号平均模型，包含全部寄生电阻和二极管的正向压降。
应用推荐