Microwave power thin film resistors were widely used as an important component of RF and microwave system in radar, communications, electron countermeasure et al.
作为射频与微波系统的重要组件—微波功率薄膜电阻器可广泛应用于雷达、通讯、电子对抗等领域。
The design of the heating resistance used in thin film gas sensitive devices and power loss of the resistors are discussed in this paper.
主要讨论薄膜气敏元件加热电阻的设计及功耗的计算，同时也讨论加热电阻材料必须具备的条件。
Wafer-level, laser-trimmed, thin-film resistors and temperature-compensated NMOS switches assure operation over the full operating temperature range with exceptional lin- ear and gain stability.
晶圆级，激光微调，薄膜电阻和温度，真实姿态补偿NMOS管开关保证在整个工作温度和特殊林耳和经营范围的增益稳定性。
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