Wafer-level, laser-trimmed, thin-film resistors and temperature-compensated NMOS switches assure operation over the full operating temperature range with exceptional lin- ear and gain stability.

晶圆级，激光微调，薄膜电阻和温度，真实姿态补偿NMOS管开关保证在整个工作温度和特殊林耳和经营范围的增益稳定性。

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The design of the heating resistance used in thin film gas sensitive devices and power loss of the resistors are discussed in this paper.

主要讨论薄膜气敏元件加热电阻的设计及功耗的计算，同时也讨论加热电阻材料必须具备的条件。

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Microwave power thin film resistors were widely used as an important component of RF and microwave system in radar, communications, electron countermeasure et al.

作为射频与微波系统的重要组件—微波功率薄膜电阻器可广泛应用于雷达、通讯、电子对抗等领域。

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