The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The typical growth condition is also determined. The composition of titanium silicide films is analysed…
还确定了典型工艺条件，并用俄歇电子能谱分析了硅化钛膜的组分。
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