硅化钛薄膜
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titanium silicide film
以上为机器翻译结果,长、整句建议使用 人工翻译 。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性,在VLSI的栅电极和互连线中显示出它潜在的优势。
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