over doped 过掺杂的
A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
多晶硅化金属层设置于杂质掺杂多晶硅层上,而多晶硅化金属层与多晶硅层可作为字线。
The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type.
收集器层被选择性地布置在第一外延层的至少一部分上并且被掺杂为具有第二导电类型。
The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.
第二外延层被布置在收集器层上并且被掺杂为具有第一导电类型。
应用推荐