This paper reviews the research on this effect in narrow gap semiconductors for infrared photo-electronic detectors.
文章主要介绍光吸收跃迁效应在窄禁带半导体红外探测器应用方面的研究进展。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper.
本文改进了半导体两带模型，计算了窄禁带半导体的非线性极化率。
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