The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper.
本文改进了半导体两带模型，计算了窄禁带半导体的非线性极化率。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
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