X ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) are used to analyze the synthesized GaN nanorods.
用X射线衍射（XRD）、扫描电镜（SEM）、高分辨率透射电镜（HRTEM）和光致发光光谱（PL）对生成的产物进行了分析。
The nanowires were analyzed by X-ray diffraction, high resolution electron microscopy (HREM), electron energy loss spectroscopy.
应用X射线衍射仪、高分辨电子显微镜和电子能量损失谱分析了纳米线的微观结构。
They were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM).
产物经x -射线粉末衍射(XRD)、透射电子显微镜(TEM)和高分辨电子显微镜(HRTEM)表征。
应用推荐