The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究半导体器件的漂移-扩散模型方程解的渐近性。
The uniqueness problem of the weak solutions of the time dependent drift diffusion model for semiconductor equation with avalanche term is considered.
研究带雪崩项的半导体漂移-扩散模型方程弱解的惟一性问题。
Finally, through an example of a drift and diffusion equation with steep distribution, the feasibility and effectivity of this algorithm are proved.
最后通过对一个存在陡峭层分布的漂移扩散方程进行求解的实例，验证了算法的可行性和有效性。
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