The asymptotic behavior of the drift diffusion model for semiconductor devices is studied.
研究半导体器件的漂移-扩散模型方程解的渐近性。
The uniqueness problem of the weak solutions of the time dependent drift diffusion model for semiconductor equation with avalanche term is considered.
研究带雪崩项的半导体漂移-扩散模型方程弱解的惟一性问题。
The migration of the photocarrier and the formative process of space field induced by photocarrier s drift, diffusion and photovoltaic effect were studied.
探讨了光生载流子在漂移、扩散和光生伏打效应三种机制下输运迁移以及空间电荷场的形成过程。
The hydrodynamic and the drift-diffusion models are the most widely used models to describe semiconductor devices today.
在所有描述半导体的数学模型中，流体动力学模型和漂移扩散模型是应用最广泛的模型。
The dielectric barrier surface discharge process is simulated using Poisson's equation and drift-diffusion equation and the distribution history of electron, ion and electric field is gained.
采用泊松方程和漂移-扩散方程对介质阻隔面放电进行数值模拟，得到了电子、离子以及电场分布随时间的变化。
The boundary layer flow control using dielectric barrier surface discharge plasma is simulated using Poisson's equation, drift-diffusion model and N-S equations.
使用泊松方程、漂移扩散模型和N—S方程对介质阻隔面放电等离子体控制边界层流动进行了一体化数值模拟。
The influences of parameters of a photovoltaic detector on its photovoltaic behavior were studied based on improved drift-diffusion model.
基于改进的漂移-扩散模型研究了光伏型光电探测器的材料参数对其光电特性的影响。
In this paper we consider the following drift-diffusion model with nonlinear mobility.
研究了一类带有非线性迁移率的漂移-扩散模型的混合边值问题。
In this paper we consider the following drift-diffusion model with nonlinear mobility.
研究了一类带有非线性迁移率的漂移-扩散模型的混合边值问题。
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