boron doping 掺硼
boron-doping 掺硼
surface boron-doping 表面渗硼
boron-doping diamond 掺硼金刚石
boron-doping polyethylene 含硼聚乙烯
boron oxide-doping 掺杂氧化硼
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
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