narrow band gap semiconductors 窄禁带半导体
wide-band-gap semiconductors 宽带隙半导体
wide band gap semiconductors 宽带隙半导体
The two-band model is improved and the nonlinear susceptibility of narrow gap semiconductors are calculated in this paper.
本文改进了半导体两带模型，计算了窄禁带半导体的非线性极化率。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
In recent years, much attention has been given to wide band gap semiconductors for the wide USES in blue and ultraviolet light emitters and detectors.
近几年来，宽禁带半导体材料引起人们的关注，因为这些材料在蓝光及紫外光发光二极管、半导体激光器和紫外光探测器上有重要的应用价值。
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