等离子体浸没离子注入 PIII
等离子体源离子注入 PSII ; Plasma source ion implantation
等离子体基离子注入 PBII ; plasma based ion implantation
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
建立了等离子体基离子注入过程中试样温度预测的理论模型，应用这个模型进行了一系列数学模拟。
A theoretic model for prediction of sample temperature during plasma based ion implantation was established, and computer simulation was done with the model.
等离子体源离子注入装置由脉冲负高压源系统、热阴极弧放电系统、真空室及样品台、真空系统和监测系统等五部分组成。
The plasma source ion implantation device consists of pulsed negative high voltage power, hot cathode arc discharge system, vacuum chamber and target stage, vacuum system and monitor system.
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