用二次离子质谱测量了注入硼离子的深度分布。

Secondary ion mass spectrometry was used to measure the distribution of implanted depths of boron ions.

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本文主要介绍了硅中硼离子注入校准样品的制备与研究。

Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.

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本文研究了硼离子注入硅经红外辐照退火后的热处理特性。

In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.

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So in the case of boron here, what we're starting with is the ion, and now we're going to pull one more electron out.

那么在硼的情况下，我们应该从这个离子开始，现在我们要再拿走一个电子。

麻省理工公开课 - 化学原理课程节选

so it's important to note that it's not in b, now we're talking about b plus, because we've already taken an electron out here.

其中有一个非常重要的地方需要注意，不是硼，而是正一价硼离子，因为我们已经拿走了一个电子了。

麻省理工公开课 - 化学原理课程节选

So, what we call this is the third ionization energy, or the negative of the binding energy, again of the 2 s orbital, but now it's in boron plus 2 to we're starting with.

那么我们称它为第三电离能，或者负的束缚能，还是，2，s，轨道的，但现在我们是从正二价硼离子开始的。

麻省理工公开课 - 化学原理课程节选