本文主要介绍了硅中硼离子注入校准样品的制备与研究。
Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.
本文研究了硼离子注入硅经红外辐照退火后的热处理特性。
In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.
通过对铅玻璃和石英玻璃的X射线光电子能谱的详细研究，发现硼离子注入后氧和硅的结合能峰稍有位移。
Based on the study of X-ray photoelectron spectroscopy of lead glass, it is found that the binding energy peaks of oxygen and silicon slightly shifted after implantation.
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