本文主要介绍了硅中硼离子注入校准样品的制备与研究。
Fabrication and research of calibration samples for boron ion implantation into silicon are discussed.
本文研究了硼离子注入硅经红外辐照退火后的热处理特性。
In this paper, thermal post-treatment for infrared rapid isothermal annealed boron-implanted silicon was studied.
通过对铅玻璃和石英玻璃的X射线光电子能谱的详细研究，发现硼离子注入后氧和硅的结合能峰稍有位移。
Based on the study of X-ray photoelectron spectroscopy of lead glass, it is found that the binding energy peaks of oxygen and silicon slightly shifted after implantation.
本文采用微波等离子体cvd法制备定向生长的金刚石薄膜。用冷离子注入法对金刚石薄膜进行硼掺杂。
The diamond films were fabricated by microwave plasma CVD and the boron-doped was created by the cold ion implantation.
本文采用微波等离子体cvd法制备定向生长的金刚石薄膜。用冷离子注入法对金刚石薄膜进行硼掺杂。
The diamond films were fabricated by microwave plasma CVD and the boron-doped was created by the cold ion implantation.
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