当你需要并联使用IGBT（绝缘栅双极电晶体）模组时，最好能共用栅极驱动（gate drive），因为采用不同的驱动电路时，会为导通和关断时间带来额外的变化，使各个电源模组之间可能产生不平衡的问题。
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器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
文中还介绍了IGBT栅极驱动电路和IGBT电压均衡电路的设计方法，并给出调制器的输出波形。
The design of the grid-driven circuit and the voltage balancing circuit for IGBT are also introduced, giving the output wave of the modulator.
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