器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
栅极驱动器，包括该栅极驱动器的电动机驱动装置，以及配备该电动机驱动装置的设备。
Gate driver, motor driving device including the gate driver, and apparatus equipped with the motor driving device.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
文中还介绍了IGBT栅极驱动电路和IGBT电压均衡电路的设计方法，并给出调制器的输出波形。
The design of the grid-driven circuit and the voltage balancing circuit for IGBT are also introduced, giving the output wave of the modulator.
高速内置HVIC提供光耦合器的IGBT栅极驱动能力，进一步降低了逆变器系统设计的总体尺寸。
The high speed built-in HVIC provides optocoupler-less IGBT gate driving capability that further reduce the overall size of the inverter system design.
此外，为符合会聚误差测量中栅极驱动脉冲特定带宽的要求，脉冲的高技术指标仍然是不可缺少的因数。
In addition, the demanding technical specification is still indispensable factor, which accords with the special bandwidth demand of the grid drive pulse in measuring the convergence error.
利用MOS管、半桥驱动芯片LM27222、栅极驱动变压器等器件，设计了变极性矩形波发生电路。
A rectangular wave generating circuit has been designed with MOSFETs, half bridge driver chip LM27222 and gate drive transformer.
由于以分 立的形式连接主电流通路和栅极驱动通路，因此可以减小寄生电感的影响，并提高电压变换效率。
Owing to the connection of the main current path and the gate driving path in discrete form, the influence of parasitic inductance can be reduced and voltage conversion efficiency can be improved.
介绍了构成IGBT驱动电路的基本要求、栅极驱动功率、栅极电阻和驱动电路形式、常用的驱动模块M 57962l等。
This paper introduces the basic requisition, grid driving power, grid resistance and driving circuit modality of the IGBT. Furthermore, introduces the driving module M57962L of the driving circuit.
该文介绍了IGBT的研发新进展，研究了IGBT栅极驱动和保护电路的设计思想，并给出了以EXB840为驱动器的实用电路。
The paper introduces the new trend in IGBT's research and development and the design idea in IGBT's drive and protection circuit, providing the practical circuit based on EXB840.
该IX2120B补充IXYSICD广泛的高压栅极驱动器，低侧栅极驱动器，光隔离门极驱动器及全系列IXYS功率半导体的产品组合。
The IX2120B complements IXYS ICD's extensive portfolio of high voltage gate drivers, low side gate drivers, optically isolated gate drivers and the full range of IXYS power semiconductors.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
栅极电极驱动电路用以于数据电极被驱动时驱动对应的栅极电极。
The grid electrode driving circuit is used to drive correspondent grid electrode when data electrode is driven.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
该方法还包括向选择器的栅极施加过度驱动电压以导通选择器。
The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
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