使用V形槽工艺，用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区，简化了工艺流程，使器件在调试过程中具有很大灵活性。
The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
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