对应更高的衬底温度，因薄膜中的氢不能完全中止纳米晶粒界面的悬键，使薄膜能带带尾加宽。
Further increasing the substrate temperature broadens the band tail width of the films because the hydrogen content is too low to passivate the dangling bonds at the NC silicon grain surface.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
研究了DD 8高温合金在平界面及胞晶区的晶粒竞争生长。
The competitive grain growth of DD8 high temperature alloy in planar and cellular interface region has been investigated.
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