结果表明，在相同的结晶条件下各类晶体缺陷在多晶硅锭的同一横截面上呈均匀分布，但在沿结晶生长方向上不同部位存在较大差异；
The results showed that the distribution of dislocations and twins in the same cross section is even, but their density varied along the axis direction of the polysilicon ingot.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
多晶硅锭的制备工艺主要包括定向凝固法及浇铸法。
The production process for making poly silicon mainly includes directional solidification and casting methods.
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