Dry etching (ICP) is normally used to fabricate GaN-based devices. But this technique is not only expensive and low selectivity but also damages the GaN materials during process.
干法刻蚀(ICP)是目前器件制备中常用的刻蚀技术,但这种技术不但昂贵、选择性低,还会损伤GaN材料而影响器件特性；发展一种新的GaN基材料的湿法刻蚀技术非常重要。
参考来源 - ⅢThe principle and the main parameters of the dry etching for silicon dioxide are introduced.
阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数。
参考来源 - 二氧化硅干法蚀刻参数的优化研究Fluxible PAA solution is deposited on quartz glass substrate by MicroPendirect-writing deposition process and imidized to polyimide （PI） sacrificial layer in oven;Au paste structural layers are fabricated by MicroPen direct-writing deposition technology,and finally released by oxygen plasma dry etching process.
2)聚酰亚胺／金导体浆料／石英玻璃基片材料体系，PI牺牲层采用微笔直写沉积和氧等离子体干法刻蚀工艺制作，结构层的制作采用微笔直写沉积电子浆料工艺。
参考来源 - 激光—微笔/微喷直写集成制造MEMS微结构关键技术研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
The principle and the main parameters of the dry etching for silicon dioxide are introduced.
阐述了二氧化硅干法蚀刻的原理和主要的蚀刻参数。
Dry etching technique of silicon is a very important process in the modern semiconductor industry.
对硅的干法刻蚀技术是现代半导体工业中非常重要的一项工艺。
Surface micromachining USES select materials and both wet and dry etching processes to form the circuitry layers.
表面微机械加工使用选择的材料和干法和湿法蚀刻工艺以形成电路层。
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