... CMOS converters 互补金属氧化半导体倒换器 CMOS devices 互补金属氧化半导体装置 CMOS ion implantation 互补金属氧化半导体离子植入法 ...
基于4个网页-相关网页
bulk-si cmos devices 体硅cmos器件
high-voltage CMOS devices 高压CMOS器件
soi cmos devices soicmos器件
series cmos devices 系列cmos器件
nanometer cmos devices 纳米cmos器件
4000 series cmos devices 系列cmos器件
CMOS photonic devices CMOS光子器件
The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
首先对RTD与化合物半导体HEMT, HBT以及硅cmos器件的集成工艺进行了介绍。
The high-voltage CMOS devices can be used in high-voltage integrated circuit(HV-IC) such as driver ICs for PDP and FED.
高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。
However, as the design rule continuously shrank down beyond the 45 nm, conventional planar CMOS devices encounter significant challenges.
不过,当设计规章向45奈米以下持续缩小时,传统的平面的电晶体将遇到很多显著的挑战。
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