... CMOS converters 互补金属氧化半导体倒换器 CMOS devices 互补金属氧化半导体装置 CMOS ion implantation 互补金属氧化半导体离子植入法 ...
基于4个网页-相关网页
bulk-si cmos devices 体硅cmos器件
high-voltage CMOS devices 高压CMOS器件
nanometer cmos devices 纳米cmos器件
CMOS photonic devices CMOS光子器件
The integration technologies of RTD with HEMT, HBT and CMOS devices are first introduced.
首先对RTD与化合物半导体HEMT, HBT以及硅cmos器件的集成工艺进行了介绍。
The high-voltage CMOS devices can be used in high-voltage integrated circuit(HV-IC) such as driver ICs for PDP and FED.
高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。
However, as the design rule continuously shrank down beyond the 45 nm, conventional planar CMOS devices encounter significant challenges.
不过,当设计规章向45奈米以下持续缩小时,传统的平面的电晶体将遇到很多显著的挑战。
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