SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
For example, the peak at 20 MHz in the spectrum is caused by the parasitic oscillation due to the output capacitance of the MOSFET and the leakage inductance of the transformer.
举例说明，20兆赫兹的峰点是钳位过程结束后主要由场效应晶体管输出电容和变压器漏感引起的寄生振荡产生的。
The various applications and features are described of gate-source parasitic capacitance with synchronous rectifier diodes in the realization of actuating rectifier.
阐述了同步整流管的栅源寄生电容在实现整流器件驱动中的不同应用及其特点，并给出了应用实例分析。
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