研究了DD 8高温合金在平界面及胞晶区的晶粒竞争生长。
The competitive grain growth of DD8 high temperature alloy in planar and cellular interface region has been investigated.
当晶粒尺寸减少时，晶粒边界或界面的体积分数有很大的增加。
As the grain size decreases, there is a significant increase in the volume fraction of grain boundaries or interfaces.
实验结果表明：多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
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