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It is discussed that the mechanism and technology of forming semi-insulating layer SiC by vanadium ion implantation in this paper.
本文对离子注入钒形成半绝缘碳化硅的机理、方法和工艺进行了深入的研究。
参考来源 - 注入钒形成碳化硅半绝缘层的理论和技术研究semi-insulation InP substrate was chosen, and epitaxy growth was done on it. Epitaxy growth was disconnected in the heterogeneity interface to improve quality of the interface.
然后,选择InP(001)半绝缘衬底,进行外延生长,在异质界面处采用间断生长的外延工艺,有效地提高了异质界面的界面质量。
参考来源 - InP衬底AlAs/InThe impurity distribution, doping activation mechanism, and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating (SI) InP materials are compared.
本文比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布，掺杂激活机理以及Fe原子与点缺陷的相互作用。
参考来源 - 半绝缘InP单晶的Fe掺杂激活及缺陷研究·2,447,543篇论文数据，部分数据来源于NoteExpress
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
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