It is discussed that the mechanism and technology of forming semi-insulating layer SiC by vanadium ion implantation in this paper.
本文对离子注入钒形成半绝缘碳化硅的机理、方法和工艺进行了深入的研究。
参考来源 - 注入钒形成碳化硅半绝缘层的理论和技术研究The impurity distribution, doping activation mechanism, and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating (SI) InP materials are compared.
本文比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布，掺杂激活机理以及Fe原子与点缺陷的相互作用。
参考来源 - 半绝缘InP单晶的Fe掺杂激活及缺陷研究·2,447,543篇论文数据，部分数据来源于NoteExpress
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
In addition to the role of compensation to achieve semi-insulating material, there are restrictions on mobility, carrier lifetime and so on.
带隙中的深能级束缚自由电子实现补偿作用外，还有限制迁移率及载流子寿命等特点。
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