然后执行热处理步骤，以便使有缺陷的半导体晶体材料的非晶化区域再结晶。
A thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.
焊核区由于动态再结晶具有细小的等轴晶粒，旁边存在一个特殊的组织形貌——热机影响区域。
The fine grain and narrow HAZ were found in friction stir weld and the dynamic recrystallization produces fine grain.
结果表明，奥氏体的再结晶发生在钢的正常淬火温度以上的一个温度范围，并在该范围内存在晶粒细化效果最佳的温度区域；
The results showed that the austenite recrystallization occurs in a temperature range biger than thenormal quenching temperature and there is an optimum temperature range for the grain refining.
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