一种制造金属氧化物半导体的方法(500)。
A method of manufacturing a metal oxide semiconductor (500).
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
采用溶胶 凝胶金属氧化物半导体薄膜 ，作为表面等离子体激元共振效应的光化学传感器的传感介质。
Optical properties of surface plasmons induced by the plan of a periodically arranged dielectric spheres on the metal slab;
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
这些微小的半导体把电子注入到金属氧化物薄膜中，或者说把它“敏化”，从而增强太阳能转换。
These tiny semiconductors inject electrons into a metal oxide film or "sensitize" it to increase solar energy conversion.
利用某些有机烷氧基金属化合物的热分解，可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.
如此可有效率地利用该金属 氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低成本。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
常用金属氧化物大多为半导体或绝缘体，对激光有良好的吸收性能。
Most metal oxides widely used are semiconductors or insulators, and have good absorbing properties to laser.
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
将半导体氧化层与金属氧化物层转化成一第一介电层。
The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
半导体型的金属氧化物，如氧化锡(SnO2)、氧化钛(TiO2)和氧化锌(ZnO)，经常作为活性材料用在固态气体传感器件中。
Semiconducting metal oxides such as tin oxide (SnO2), titanium dioxide (TiO2) and zinc oxide (ZnO) are routinely used as active materials in solid state gas sensing devices.
在一实施例中，此方法包含在一基板上形成半导体氧化层以及在半导体氧化层上形成一金属氧化物层。
In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer.
半导体氧化 物颗粒包括金属氧化物和双金属氧化物。
Semiconductive oxide particles include metal oxides and bimetallic oxides.
半导体氧化 物颗粒包括金属氧化物和双金属氧化物。
Semiconductive oxide particles include metal oxides and bimetallic oxides.
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