国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。
A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.
使用该方式电路，室温下半导体激光二极管注入电流波动为10- 5，温度波动优于10- 4。
Using the circuits, the fluctuation of injection current is 10 -5 and the fluctuation of case temperature is better than 10 -4 under the room temperature.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
实验中获得的由二极管注入泵浦功率至opo信号光平均输出功率的转换效率达4.2%，信号光脉冲宽度比消耗后的泵浦光脉冲宽度压缩了13倍。
The conversion efficiency of the average power is 4.2% from pump diode to OPO signal output and the signal pulse duration is about 13 times shorter than that of the depleted pump light.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
在提高聚合物发光二极管的各项性能的进程中，电注入发光聚合物的能带工程将起着积极的作用。
During the improvement of their performance, the energy band engineering of electroluminescent polymers will take positive effect.
在提高聚合物发光二极管的各项性能的进程中，电注入发光聚合物的能带工程将起着积极的作用。
During the improvement of their performance, the energy band engineering of electroluminescent polymers will take positive effect.
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