... 注入电压 injecting voltage 注入二极管 injection diode 注入发光 injection luminescence ...
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雪崩注入二极管 aid ; spacistor ; [电子] avalanche injection diode
双注入型二极管 double injection diode
线性注入激光二极管 linear injectino laser diode
注入型激光二极管 ILD ; injection laser diode
障壁注入式二极管 BARITT diodes
势垒注入瞬时二极管 barrier injection transit-time diode
和注入式激光二极管 Injection laser diode
垒注入渡越时间二极管 Barrier Injection Transit Time Diode
国内外制备PIN二极管主要采用离子注入方法，扩散方法，外延方法。
A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial.
使用该方式电路，室温下半导体激光二极管注入电流波动为10 - 5，温度波动优于10 - 4。
Using the circuits, the fluctuation of injection current is 10 -5 and the fluctuation of case temperature is better than 10 -4 under the room temperature.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
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