利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。
The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
因此研究重掺硼硅单晶中氧和氧沉淀行为具有非常重要的意义，是目前硅材料界研究的热点之一。
Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron-doping Czochralski silicon (CZSi).
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
采用掺硼金刚石膜电极（BDD）电化学氧化的方法提高2-氯苯酚废水的可生化性，与钛基钌铱氧化物电极（DSA）进行对比，研究了该方法的机理。
Electrochemical oxidation on boron-doped diamond (BDD) anode was used as pretreatment for 2-chlorophenol wastewater to improve its biodegradability, using DSA electrode as a comparison.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
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