...炭的电化学性能 - TNMSC 关键字: 负极材料；掺硼；呋喃树脂炭；电化学性能[gap=1281]Key words: anode materials; boron doping; furan resin carbons; electrochemical properties...
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掺硼金刚石膜的电火花加工研究_电子资料文库 关键词:CVD金刚石膜;掺硼;电火花加工;可加工性 [gap=1055]Keywords:CVDdiamond;B-doped;EDM;machinability
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... boron-containing polymer || 含硼聚合物 boron-doped || 掺硼 boron-doping || 掺硼 ...
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The oxidizing temperature of boron-doped diamond increased approximately 100℃through the thermal analysis.
金刚石的热分析证明,掺硼后金刚石的氧化温度提高了约100℃。
参考来源 - 含硼金刚石单晶的微观品质与半导体性能的相关性研究It is comprehensive outcome of melting , gasification, oxidation and surface graphitization. It is demonstrated that EDM method can effectively process B-doped diamond film.
证实了掺硼金刚石膜是可以电加工的。
参考来源 - EACVD掺硼金刚石膜制备及加工性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
利用多普勒增宽谱和电子顺磁共振研究了掺硼和掺硫金刚石薄膜的缺陷状态。
The defect properties in chemical vapor deposition diamond films doped by sulfur and boron were investigated by the Doppler broadening measurements and electron paramagnetic resonance (EPR).
结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。
The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
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