结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。
The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.
对常压射频冷等离子体去除光刻胶的研究具有重要的学术意义和实用价值。
Therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.
研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。
The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.
光刻胶的旋涂与烘烤，薄膜材料制备。
Photoresist coating preparation and baking; Thin film preparation.
飞秒激光su8负性光刻胶双光子聚合工艺研究。
Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.
但是这种光刻胶会被剥离，仅留下金属结合。
But this photoresist was then peeled off, leaving only a pure metal on metal bond.
根据光刻机和光刻胶特性，模拟了实际的光刻过程。
The actual lithographic process was simulated according to the process conditions, such as lithographic tools and the property of resist.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。
With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.
RD 6系列光刻胶显影液，可用于正负型光刻胶且显影速度快。
RD6 series resist developer for quick resist development, universally compatible with the development of positive or negative resists.
研究结果表明，光刻胶厚度的减小会引起宽度的增大和深度的减小。
Experimental results show that the decrease of photo-resist thickness will cause the increase of width and the decrease of depth.
另外，本文还利用时域有限差分法分析了光刻胶层内部的光场分布。
In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.
这种名叫“冷焊”的工艺使用的是临时粘合剂，一种叫做光刻胶的物质。
That so-called "cold welding" process did make use of a temporary adhesive, a substance known as a photoresist.
在样机上用光刻胶正胶进行了曝光试验，其结果与理论分析的结论一致。
The exposure experiments on the system showed a good agreement of the experimental results and the theoretical derivation and analysis.
着重研究了光刻胶的前烘胶温度、回流温度、回流时间对回流效果的影响。
The impact of prebake temperature, reflow temperature and reflow time on the effect of pr reflowing is studied.
用光刻胶记录了水窗波段同轴X射线全息图，并以数字方法再现了原物像。
Soft X-ray holograms within water-windows are recorded in photoresist and reconstructed by using numerical technology.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。
Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.
SU 8光刻胶已应用于LIGA技术的标准化掩模制造工艺和一些器件的研究工作。
Now SU8 resist has been used to make the LIGA mask for the LIGA standard process and some devices researching work.
通过改变反应气体的比率或成膜输出，可以使无机光刻胶层的氧浓度在厚度方向不同。
The oxygen concentration of the inorganic resist layer can be varied along the thickness direction by changing the proportion or film formation output of reactive gas.
分析了用光刻胶记录激光散斑来制作粗糙度参数可控表面的方法，并成功地制作了一批样品。
A method of fabricating rough surfaces of known statistical parameters by exposing the photoresist to laser speckle patterns is analysed in this paper. A set of samples have been made successfully.
该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。
The process was controllable and could be applied to strip the photoresist residual of diffractive optical element fabricated on the thick substrate.
对于要求同时检测矩形或接近矩形槽形的全息光刻胶光栅掩模的槽深和占宽比，该方法完全适用。
The method is qualified for measurement of groove depth and duty cycle simultaneously for the rectangle-shaped or similar profile of holographic grating mask.
结果表明：采用修正后的剂量曝光，光刻胶中的能量沉积比较均匀，曝光分辨率有较大幅度的提高。
The simulating result shows that the energy deposition distribution is average comparatively, and the exposure resolution is enhanced largely by using the corrected shot dose.
对于光刻胶的去除用热丙酮泡、超声清洗、反应离子刻蚀和高温灰化法相结合，能达到较好的效果。
The other is the removal of SU-8, which can be resolved by the combination of marinating in hot acetone, ultrasonic cleanout, RIE and cineration at high temperature.
接着，硅晶片会被送入一个化学浴室，在暴露在外的硅衬底上蚀刻沟槽，同时光刻胶覆盖的区域不会受到任何影响。
Then the wafer is sent through a chemical bath that etches trenches into the exposed substrate, while leaving the areas covered by the photoresist untouched.
建立了描述厚层光刻胶内衍射光场形成过程的物理模型，并利用傅里叶模方法模拟计算和分析了其内部衍射光场分布。
Then Fourier model method, mostly applied to study the diffractive properties of gratings is adopted to analyze the diffractive image field in thick film photo resist.
该试剂用于清除匀胶后残留于硅片边缘及背面的光刻胶，已经广泛应用于中、大规模集成电路及其它半导体器件的生产。
The chemical is widely used in the production of LSI, VLSI and other semiconductors to remove photoresist edge bead that occurs during typical spin coat wafer processing.
我们研制的非硅表面微机械工艺采用两次或三次掩模电镀层，聚酰亚胺和光刻胶分别作为底层和第二、第三层的牺牲层。
We developed a non silicon surface micro machining process with two or three mask electroplating layers and using polyimide or photoresist as sacrificial layers.
利用SU -8光刻胶为主要材料，采用多级曝光和电铸金属实现3D结构的工艺技术，研制出了微针执行器的雏形器件。
The rudiments of microneedle actuator have been developed, which is mainly made of SU 8 photoresist, and its 3D construction is fabricated by multistep exposal and electroforming metal.
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