光刻胶的旋涂与烘烤，薄膜材料制备。
Photoresist coating preparation and baking; Thin film preparation.
飞秒激光su8负性光刻胶双光子聚合工艺研究。
Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.
介绍了连续微光学元件在光刻胶上的面形控制方法。
The method on profile - control of micro - optic element in photoresist was presented.
根据光刻机和光刻胶特性，模拟了实际的光刻过程。
The actual lithographic process was simulated according to the process conditions, such as lithographic tools and the property of resist.
用熔融缩聚法含成的聚酯型光刻胶有较宽的分子量分布。
The polyester type photoresists made by melt polycondensation have wide molecular weight distribution.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。
With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.
RD 6系列光刻胶显影液，可用于正负型光刻胶且显影速度快。
RD6 series resist developer for quick resist development, universally compatible with the development of positive or negative resists.
研究结果表明，光刻胶厚度的减小会引起宽度的增大和深度的减小。
Experimental results show that the decrease of photo-resist thickness will cause the increase of width and the decrease of depth.
另外，本文还利用时域有限差分法分析了光刻胶层内部的光场分布。
In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.
结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。
The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.
这篇论文是厚su - 8光刻胶接触式UV光刻后形貌的两维模拟。
The 2-d simulation of thick SU-8 photoresist profile after UV lithography is presented.
RELACS技术可以应用于不同光刻胶类型的“T”，型栅制作中。
RELACS process could be used to manufacture T-gate with various type photoresist.
这种名叫“冷焊”的工艺使用的是临时粘合剂，一种叫做光刻胶的物质。
That so-called "cold welding" process did make use of a temporary adhesive, a substance known as a photoresist.
在样机上用光刻胶正胶进行了曝光试验，其结果与理论分析的结论一致。
The exposure experiments on the system showed a good agreement of the experimental results and the theoretical derivation and analysis.
对常压射频冷等离子体去除光刻胶的研究具有重要的学术意义和实用价值。
Therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.
利用SU-8光刻胶制备电铸模和微电铸工艺，制造了二维微执行器原型。
The prototype of the micro actuator is fabricated by means of micro electroforming and SU-8 photolithography techniques.
着重研究了光刻胶的前烘胶温度、回流温度、回流时间对回流效果的影响。
The impact of prebake temperature, reflow temperature and reflow time on the effect of pr reflowing is studied.
研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。
The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.
用光刻胶记录了水窗波段同轴X射线全息图，并以数字方法再现了原物像。
Soft X-ray holograms within water-windows are recorded in photoresist and reconstructed by using numerical technology.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。
Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.
实验还得出玻璃的腐蚀速率和温度的关系以及光刻胶的耐蚀时间和温度之间的关系。
The experiments also reveal the relation between the etching rate of glass and the temperature of solution as well as the relation bet…
SU 8光刻胶已应用于LIGA技术的标准化掩模制造工艺和一些器件的研究工作。
Now SU8 resist has been used to make the LIGA mask for the LIGA standard process and some devices researching work.
通过改变反应气体的比率或成膜输出，可以使无机光刻胶层的氧浓度在厚度方向不同。
The oxygen concentration of the inorganic resist layer can be varied along the thickness direction by changing the proportion or film formation output of reactive gas.
分析了用光刻胶记录激光散斑来制作粗糙度参数可控表面的方法，并成功地制作了一批样品。
A method of fabricating rough surfaces of known statistical parameters by exposing the photoresist to laser speckle patterns is analysed in this paper. A set of samples have been made successfully.
因此，可以通过模拟结果得到不同厚度光刻胶的最佳曝光剂量，以便得到高质量的微结构图形。
The good agreement between the experimental and theoretical results allows to get the high pattern transfer accuracy microstructure through optimizing exposure dose for different resist thicknesses.
该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。
The process was controllable and could be applied to strip the photoresist residual of diffractive optical element fabricated on the thick substrate.
对于要求同时检测矩形或接近矩形槽形的全息光刻胶光栅掩模的槽深和占宽比，该方法完全适用。
The method is qualified for measurement of groove depth and duty cycle simultaneously for the rectangle-shaped or similar profile of holographic grating mask.
结果表明：采用修正后的剂量曝光，光刻胶中的能量沉积比较均匀，曝光分辨率有较大幅度的提高。
The simulating result shows that the energy deposition distribution is average comparatively, and the exposure resolution is enhanced largely by using the corrected shot dose.
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