• 光刻的旋烘烤薄膜材料制备

    Photoresist coating preparation and baking; Thin film preparation.

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  • 但是这种光刻会被剥离留下金属结合。

    But this photoresist was then peeled off, leaving only a pure metal on metal bond.

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  • 飞秒激光su8光刻光子聚合工艺研究

    Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.

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  • 介绍了连续微光学元件光刻面形控制方法

    The method on profile - control of micro - optic element in photoresist was presented.

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  • 根据光刻光刻胶特性模拟实际光刻过程

    The actual lithographic process was simulated according to the process conditions, such as lithographic tools and the property of resist.

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  • 熔融缩聚法含成聚酯光刻较宽分子量分布

    The polyester type photoresists made by melt polycondensation have wide molecular weight distribution.

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  • 采用全息法制备了光刻光栅,并用该光栅离子蚀刻

    Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.

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  • 利用光刻形成保护侧墙,湿法腐蚀来形成发射极钝化边沿。

    With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.

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  • 树脂光刻传统光刻之一,具有高度的透明性分辨率

    Methacrylate photoresist was one of the tradition photoresists and it had high transparent and resolution.

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  • RD 6系列光刻显影液,可用于正负光刻胶显影速度快

    RD6 series resist developer for quick resist development, universally compatible with the development of positive or negative resists.

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  • 根据有机引发剂条件下光刻胶过程分析得出了纳米实体

    According to the analysis of the photoresist process that got organic initiator conditions, nanometer of physical map was obtained.

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  • 研究结果表明光刻胶厚度减小引起宽度增大深度的减小。

    Experimental results show that the decrease of photo-resist thickness will cause the increase of width and the decrease of depth.

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  • 另外,本文还利用时域有限差分分析了光刻层内部分布

    In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.

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  • 结果表明光刻胶热熔技术一种简单实用微透镜阵列制作技术。

    The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.

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  • 篇论文su - 8光刻接触式UV光刻形貌两维模拟

    The 2-d simulation of thick SU-8 photoresist profile after UV lithography is presented.

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  • RELACS技术可以应用不同光刻类型的“T”,型栅制作

    RELACS process could be used to manufacture T-gate with various type photoresist.

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  • 磷化晶片出产线上经过称为光刻化学物质进行包裹

    The material of oar shape chemistry that phosphor turns indium chip to call photoetching glue through a kind on product line has package.

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  • 这种名叫“冷焊工艺使用的是临时粘合剂叫做光刻物质

    That so-called "cold welding" process did make use of a temporary adhesive, a substance known as a photoresist.

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  • 样机光刻胶进行曝光试验,其结果理论分析结论一致

    The exposure experiments on the system showed a good agreement of the experimental results and the theoretical derivation and analysis.

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  • 常压射频冷等离子体去除光刻研究具有重要的学术意义实用价值。

    Therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.

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  • 利用SU-8光刻胶制备电铸模电铸工艺,制造了二维执行原型

    The prototype of the micro actuator is fabricated by means of micro electroforming and SU-8 photolithography techniques.

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  • 着重研究光刻胶温度回流温度、回流时间回流效果影响

    The impact of prebake temperature, reflow temperature and reflow time on the effect of pr reflowing is studied.

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  • 研究结果表明这种肉桂光刻胶具有优良的耐热适宜的光敏特性

    The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.

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  • 光刻胶记录了水窗波段同轴X射线全息图数字方法再现了原物像。

    Soft X-ray holograms within water-windows are recorded in photoresist and reconstructed by using numerical technology.

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  • 通过反应离子刻蚀可以将光刻透镜图形转移这种高性能的聚合物材料上。

    Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.

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  • 紫外光照射穿透的地方光刻胶化学特性会被削弱使硅晶片表面留下图案

    Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.

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  • 实验得出玻璃腐蚀速率温度关系以及光刻胶的耐蚀时间和温度之间的关系。

    The experiments also reveal the relation between the etching rate of glass and the temperature of solution as well as the relation bet…

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  • SU 8光刻胶应用LIGA技术的标准化模制造工艺一些器件研究工作

    Now SU8 resist has been used to make the LIGA mask for the LIGA standard process and some devices researching work.

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  • 通过改变反应气体比率可以使无机光刻胶浓度厚度方向不同

    The oxygen concentration of the inorganic resist layer can be varied along the thickness direction by changing the proportion or film formation output of reactive gas.

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  • 分析了光刻胶记录激光制作粗糙度参数可控表面方法,并成功地制作了一样品。

    A method of fabricating rough surfaces of known statistical parameters by exposing the photoresist to laser speckle patterns is analysed in this paper. A set of samples have been made successfully.

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