在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。
H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。
The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
牺牲栅电极间隔物设置在所述栅极电介质和所述栅电极的侧壁上，在所述衬底上蚀刻空腔，并且空腔在牺牲栅电极间隔物下方延伸。
Sacrificial gate spacers are disposed on the sidewalls of the gate dielectric and gate electrode. Cavities are etched into the substrate extending under the sacrificial gate spacers.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
深入研究了热载流子退化过程中栅电流和衬底电流的退化规律，并建立了一个准确的栅电流退化解析模型。
Degradation characteristics of gate current and substrate current during stress are studied, and an accurate analytic degradation model of gate current is presented.
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