在埋氧化层厚度不同的SIMOX衬底上制备了H型栅结构器件。

H-gate devices were fabricated on SIMOX substrates with different thickness of BOX.

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重点讨论MOSFET的高频寄生参数，包括栅电阻、衬底电阻、寄生电容等。

The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance.

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碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。

Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).

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