本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
该文从衬底损耗、金属损耗及邻近效应出发，首次提出了一种提高并联集成电感性能的方法。
The paper initiates a method for improving capability of parallel connected spiral inductor based on substrate loss, metal loss and proximity effects.
衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应，严重地影响了模拟电路的性能。
Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal performance of the analog circuits.
器件栅氧厚度的减小、场氧工艺的改变以及衬底材料的不同等都将导致MOS器件的总剂量辐射效应发生改变。
The decrease of the gate oxide, the differences of field oxides processing and the selection of the substrate materials will all affect the total dose radiation effects of MOS devices.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
利用银镜作为衬底，本文对乳酸钙的表面增强喇曼散射效应进行了研究。
The Surface Enhanced Raman Scattering (SERS) effect from Calcium lactate (CL)on Ag mirror is studied in this paper.
此外，合适的激发光，能更好地匹配金属衬底的表面等离子体共振吸收，对表面增强荧光效应更加有利。
It is also found that proper excitation wavelength, which corresponds to greater SPR absorption of metal substrate, is another factor that can significantly influence the SEF effect.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。
The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
在文章中，我们在现有的MOS器件模型的基础上再组建一个寄生的衬底模型，然后利用此模型逐一对单个MOS器件，具有累积效应的数字电路和部分基本模拟电路进行了仿真实验和分析。
In the article, we make a parasitic substrate model on the existing MOS model, and use this model to do simulation for each single MOS, accumulated effect circuit and some useful analog circuit.
结果表明，射频功率的改变直接影响到离子对衬底的轰击效应，而反应气压的改变影响气体分子的平均自由程。
Results show that the change of power affects ions' bombardment on the substrate, and that of pressure lead to the change of the mean free path of the molecular.
讨论了样品的自吸收效应，加热温度、选择性反射带和粒度以及衬底等物理条件对红外辐射光谱的影响。
The effect of sample self absorption, selective reflection, temperature, sample grain and liner on FT IR radiation spectrum are discussed.
模拟和测量的结果证明DSOI器件与SO I器件相比，具有衬底热阻较低的优点，因而DSOI器件在保持SOI器件电学特性优势的同时消除了SO I器件严重的自热效应。
Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts.
本发明公开了一种采用有源层图形化制备有机场效应晶体管的方法，包括：在绝缘衬底上涂敷光刻胶；
The invention discloses a method for preparing an organic field effect tube by using active layer graph. The method comprises the following steps of: coating photoresist on an insulated substrate;
研究结果表明，银和铝衬底表面均对AO分子具有明显的荧光增强效应，而铜衬底表面对荧光分子则无明显增强效应。
The results show that strong fluorescence enhancements were observed for Rh6G and AO molecules at Ag and Al surfaces but no obvious enhancement was detected at Cu surface.
研究结果表明，银和铝衬底表面均对AO分子具有明显的荧光增强效应，而铜衬底表面对荧光分子则无明显增强效应。
The results show that strong fluorescence enhancements were observed for Rh6G and AO molecules at Ag and Al surfaces but no obvious enhancement was detected at Cu surface.
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