本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
该文从衬底损耗、金属损耗及邻近效应出发，首次提出了一种提高并联集成电感性能的方法。
The paper initiates a method for improving capability of parallel connected spiral inductor based on substrate loss, metal loss and proximity effects.
衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应，严重地影响了模拟电路的性能。
Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal performance of the analog circuits.
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