该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。
The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.
本文着眼于使用计算流体力学方法对带有竖直吸水管、正向进水的开敞式前池与进水池的流态进行数值模拟。
In this paper the open sump flow with vertical intake is simulated with calculation fluid dynamics method according to model-test reports of Lianhu pump station.
本文着眼于使用计算流体力学方法对带有竖直吸水管、正向进水的开敞式前池与进水池的流态进行数值模拟。
In this paper the open sump flow with vertical intake is simulated with calculation fluid dynamics method according to model-test reports of Lianhu pump station.
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